Phosphorus concentration profile in silicon produced by means of the nuclear reaction 30Si(p, γ)31P

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Title: Phosphorus concentration profile in silicon produced by means of the nuclear reaction 30Si(p, γ)31P
Authors: García Molina, Rafael | Heredia-Avalos, Santiago | Abril, Isabel
Research Group/s: Interacción de Partículas Cargadas con la Materia
Center, Department or Service: Universidad de Alicante. Departamento de Física, Ingeniería de Sistemas y Teoría de la Señal | Universidad de Alicante. Departamento de Física Aplicada
Keywords: Proton energy loss | Ion implantation | Nuclear resonant reactions
Knowledge Area: Física Aplicada
Issue Date: Apr-2000
Publisher: Elsevier Science
Citation: GARCIA MOLINA, Rafael; HEREDIA-AVALOS, Santiago; ABRIL, Isabel. "Phosphorus concentration profile in silicon produced by means of the nuclear reaction 30Si(p, γ)31P". Vacuum. Vol. 57, No. 1 (Apr. 2000). ISSN 0042-207X, pp. 81-85
Abstract: A possibility to introduce phosphorus in silicon, different from direct phosphorus ion implantation, is discussed. The method is based on the nuclear reaction 30Si(p, γ)31P that occurs when a silicon sample is bombarded with energetic protons. It is shown that the pattern of the phosphorus concentration profile can be accurately controlled through an appropiate choice of the energetic characteristics of the proton beam.
Sponsor: Financial support from the Spanish DGES (Project PB96-1118) and from the Generalitat Valenciana (Project GV99-54-1-01). SHA thanks the Spanish MEC for a research grant.
URI: http://hdl.handle.net/10045/25367
ISSN: 0042-207X (Print) | 1879-2715 (Online)
DOI: 10.1016/S0042-207X(00)00110-X
Language: eng
Type: info:eu-repo/semantics/article
Peer Review: si
Publisher version: http://dx.doi.org/10.1016/S0042-207X(00)00110-X
Appears in Collections:INV - IPCM - Artículos de Revistas

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