Phosphorus concentration profile in silicon produced by means of the nuclear reaction 30Si(p, γ)31P
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10045/25367
Title: | Phosphorus concentration profile in silicon produced by means of the nuclear reaction 30Si(p, γ)31P |
---|---|
Authors: | García Molina, Rafael | Heredia-Avalos, Santiago | Abril, Isabel |
Research Group/s: | Interacción de Partículas Cargadas con la Materia |
Center, Department or Service: | Universidad de Alicante. Departamento de Física, Ingeniería de Sistemas y Teoría de la Señal | Universidad de Alicante. Departamento de Física Aplicada |
Keywords: | Proton energy loss | Ion implantation | Nuclear resonant reactions |
Knowledge Area: | Física Aplicada |
Issue Date: | Apr-2000 |
Publisher: | Elsevier Science |
Citation: | GARCIA MOLINA, Rafael; HEREDIA-AVALOS, Santiago; ABRIL, Isabel. "Phosphorus concentration profile in silicon produced by means of the nuclear reaction 30Si(p, γ)31P". Vacuum. Vol. 57, No. 1 (Apr. 2000). ISSN 0042-207X, pp. 81-85 |
Abstract: | A possibility to introduce phosphorus in silicon, different from direct phosphorus ion implantation, is discussed. The method is based on the nuclear reaction 30Si(p, γ)31P that occurs when a silicon sample is bombarded with energetic protons. It is shown that the pattern of the phosphorus concentration profile can be accurately controlled through an appropiate choice of the energetic characteristics of the proton beam. |
Sponsor: | Financial support from the Spanish DGES (Project PB96-1118) and from the Generalitat Valenciana (Project GV99-54-1-01). SHA thanks the Spanish MEC for a research grant. |
URI: | http://hdl.handle.net/10045/25367 |
ISSN: | 0042-207X (Print) | 1879-2715 (Online) |
DOI: | 10.1016/S0042-207X(00)00110-X |
Language: | eng |
Type: | info:eu-repo/semantics/article |
Peer Review: | si |
Publisher version: | http://dx.doi.org/10.1016/S0042-207X(00)00110-X |
Appears in Collections: | INV - IPCM - Artículos de Revistas |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
2000vacuum57(2000)81doping PinSi.pdf | Versión final (acceso restringido) | 95,33 kB | Adobe PDF | Open Request a copy |
Items in RUA are protected by copyright, with all rights reserved, unless otherwise indicated.