Phosphorus concentration profile in silicon produced by means of the nuclear reaction 30Si(p, γ)31P

Please use this identifier to cite or link to this item: http://hdl.handle.net/10045/25367
Full metadata record
Full metadata record
DC FieldValueLanguage
dc.contributorInteracción de Partículas Cargadas con la Materiaes
dc.contributor.authorGarcía Molina, Rafael-
dc.contributor.authorHeredia-Avalos, Santiago-
dc.contributor.authorAbril, Isabel-
dc.contributor.otherUniversidad de Alicante. Departamento de Física, Ingeniería de Sistemas y Teoría de la Señales
dc.contributor.otherUniversidad de Alicante. Departamento de Física Aplicadaes
dc.date.accessioned2012-11-27T07:59:42Z-
dc.date.available2012-11-27T07:59:42Z-
dc.date.issued2000-04-
dc.identifier.citationGARCIA MOLINA, Rafael; HEREDIA-AVALOS, Santiago; ABRIL, Isabel. "Phosphorus concentration profile in silicon produced by means of the nuclear reaction 30Si(p, γ)31P". Vacuum. Vol. 57, No. 1 (Apr. 2000). ISSN 0042-207X, pp. 81-85es
dc.identifier.issn0042-207X (Print)-
dc.identifier.issn1879-2715 (Online)-
dc.identifier.urihttp://hdl.handle.net/10045/25367-
dc.description.abstractA possibility to introduce phosphorus in silicon, different from direct phosphorus ion implantation, is discussed. The method is based on the nuclear reaction 30Si(p, γ)31P that occurs when a silicon sample is bombarded with energetic protons. It is shown that the pattern of the phosphorus concentration profile can be accurately controlled through an appropiate choice of the energetic characteristics of the proton beam.es
dc.description.sponsorshipFinancial support from the Spanish DGES (Project PB96-1118) and from the Generalitat Valenciana (Project GV99-54-1-01). SHA thanks the Spanish MEC for a research grant.es
dc.languageenges
dc.publisherElsevier Sciencees
dc.subjectProton energy losses
dc.subjectIon implantationes
dc.subjectNuclear resonant reactionses
dc.subject.otherFísica Aplicadaes
dc.titlePhosphorus concentration profile in silicon produced by means of the nuclear reaction 30Si(p, γ)31Pes
dc.typeinfo:eu-repo/semantics/articlees
dc.peerreviewedsies
dc.identifier.doi10.1016/S0042-207X(00)00110-X-
dc.relation.publisherversionhttp://dx.doi.org/10.1016/S0042-207X(00)00110-Xes
dc.rights.accessRightsinfo:eu-repo/semantics/restrictedAccesses
Appears in Collections:INV - IPCM - Artículos de Revistas

Files in This Item:
Files in This Item:
File Description SizeFormat 
Thumbnail2000vacuum57(2000)81doping PinSi.pdfVersión final (acceso restringido)95,33 kBAdobe PDFOpen    Request a copy


Items in RUA are protected by copyright, with all rights reserved, unless otherwise indicated.