Tunable, multifunctional opto-electrical response in multilayer FePS3/single-layer MoS2 van der Waals p–n heterojunctions
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Título: | Tunable, multifunctional opto-electrical response in multilayer FePS3/single-layer MoS2 van der Waals p–n heterojunctions |
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Autor/es: | Ramos, Maria | Gadea, Marcos | Mañas-Valero, Samuel | Boix-Constant, Carla | Henríquez-Guerra, Eudomar | Díaz-García, María A. | Coronado, Eugenio | Calvo, M. Reyes |
Grupo/s de investigación o GITE: | Física de la Materia Condensada |
Centro, Departamento o Servicio: | Universidad de Alicante. Departamento de Física Aplicada | Universidad de Alicante. Instituto Universitario de Materiales |
Palabras clave: | Multilayer FePS3 | Single-layer MoS2 | van der Waals semiconductors | p–n heterojunctions |
Fecha de publicación: | 26-feb-2024 |
Editor: | Royal Society of Chemistry |
Cita bibliográfica: | Nanoscale Advances. 2024, 6: 1909-1916. https://doi.org/10.1039/D3NA01134H |
Resumen: | The combination of specific van der Waals semiconductors in vertical stacks leads to atomically sharp heterointerfaces with unique properties, offering versatility and additional functionality for thin, flexible, optoelectronic devices. In this work, we demonstrate heterostructures built from single-layer MoS2 (n-type) and multilayer FePS3 (p-type) as multifunctional p–n junctions where robust photoluminescent light emission and broadband electrical photo-response coexist. This is made possible by the inherent properties of the materials involved and the precise energy band alignment at their interface, which preserves the photoluminescent emission provided by the single-layer MoS2 and confers exceptional tunability to the system. Indeed, through small changes in the applied voltage across the junction, the interplay between photoluminescence and photocurrent generation can be tuned, allowing for a precise control of the light emission of single-layer MoS2 – from severely quenched to an order of magnitude enhancement. Additionally, the broadband photo-response of the system presents an enhanced performance under ultraviolet illumination, in contrast to other van der Waals heterostacks containing single-layer semiconductors. Furthermore, this photo-response can be adjusted by the application of an external electric field, enabling photocurrent generation under both reverse and forward bias, thereby contributing to the overall functionality and versatility of the system. |
Patrocinador/es: | The authors acknowledge funding from Generalitat Valenciana through grants MFA/2022/045 and MFA/2022/050, IDIFEDER/2020/005, IDIFEDER/2021/016, PROMETEO Program and PO FEDER Program, the APOSTD/2020/249 fellowship for M. R., and support from the Plan Gen-T of Excellence for M. R. C. (CideGenT2018004); from the Spanish MCINN through grants PLASTOP PID2020-119124RB-I00, 2DHETEROS PID2020-117152RB-100, and Excellence Unit “María de Maeztu” CEX2019-000919-M; and from the European Union (ERC AdG Mol-2D 788222). |
URI: | http://hdl.handle.net/10045/141557 |
ISSN: | 2516-0230 |
DOI: | 10.1039/D3NA01134H |
Idioma: | eng |
Tipo: | info:eu-repo/semantics/article |
Derechos: | This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. |
Revisión científica: | si |
Versión del editor: | https://doi.org/10.1039/D3NA01134H |
Aparece en las colecciones: | INV - Física de la Materia Condensada - Artículos de Revistas Investigaciones financiadas por la UE |
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