Martínez Asencio, Jesús, Ruestes, Carlos, Bringa, Eduardo M., Caturla, Maria J.
Defect production in Ar irradiated graphene membranes under different initial applied strains
Nuclear Instruments and Methods in Physics Research B. 2017, 393: 44-48. doi:10.1016/j.nimb.2016.09.033
URI: http://hdl.handle.net/10045/66518
DOI: 10.1016/j.nimb.2016.09.033
ISSN: 0168-583X (Print)
Abstract: 
Irradiation with low energy Ar ions of graphene membranes gives rise to changes in the mechanical properties of this material. These changes have been associated to the production of defects, mostly isolated vacancies. However, the initial state of the graphene membrane can also affect its mechanical response. Using molecular dynamics simulations we have studied defect production in graphene membranes irradiated with 140 eV Ar ions up to a dose of 0.075 × 1014 ions/cm2 and different initial strains, from −0.25% (compressive strain) to 0.25% (tensile strain). For all strains, the number of defects increases linearly with dose with a defect production of about 80% (80 defects every 100 ions). Defects are mostly single vacancies and di-vacancies, although some higher order clusters are also observed. Two different types of di-vacancies have been identified, the most common one being two vacancies at first nearest neighbours distance. Differences in the total number of defects with the applied strain are observed which is related to the production of a higher number of di-vacancies under compressive strain compared to tensile strain. We attribute this effect to the larger out-of-plane deformations of compressed samples that could favor the production of defects in closer proximity to others.
Keywords:Molecular dynamics, Graphene, Defects, Irradiation
Elsevier
info:eu-repo/semantics/article