Phosphorus doping of silicon by proton induced nuclear reactions

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Title: Phosphorus doping of silicon by proton induced nuclear reactions
Authors: Abril, Isabel | García Molina, Rafael | Erokhin, Konstantin M. | Kalashnikov, Nicolay P.
Research Group/s: Interacción de Partículas Cargadas con la Materia
Center, Department or Service: Universidad de Alicante. Departamento de Física Aplicada
Keywords: Phosphorus doping | Silicon | Proton | Nuclear resonant reaction
Knowledge Area: Física Aplicada
Issue Date: 29-May-1995
Publisher: American Institute of Physics
Citation: ABRIL, Isabel, et al. “Phosphorus doping of silicon by proton induced nuclear reactions”. Applied Physics Letters. Vol. 66, No. 22 (29 May 1995). ISSN 0003-6951, pp. 3036-3038
Abstract: We propose a method to dope silicon with phosphorus by means of the nuclear resonant reaction 30Si(p,γ)31P, which takes place when a natural silicon target is bombarded with a few MeV proton beam. This alternative method considerably reduces the usual target damage produced by the more commonly used direct phosphorus implantation.
Sponsor: Partial support from the Spanish DGICYT (Project Nos. PB92-0341 and PB93-1125). N.P.K. thanks the Spanish DGICYT for financial support (SAB93-0182) during his sabbatical stay in the Universidad de Murcia.
URI: http://hdl.handle.net/10045/25348
ISSN: 0003-6951 (Print) | 1077-3118 (Online)
DOI: 10.1063/1.114269
Language: eng
Type: info:eu-repo/semantics/article
Rights: Copyright © 1995 American Institute of Physics
Peer Review: si
Publisher version: http://dx.doi.org/10.1063/1.114269
Appears in Collections:INV - IPCM - Artículos de Revistas

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